PNZ102F - Silicon NPN Phototransistors

Features

Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ. ) Fast response : tr, tf = 3 µs (typ. ) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Oper.

Panasonic Semiconductor

Datasheet Details

Part number	PNZ102F
Manufacturer	Panasonic
File Size	50.15 KB
Description	Silicon NPN Phototransistors
Datasheet	PNZ102F Datasheet
Additional preview pages of the PNZ102F datasheet.

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Full PDF Text Transcription

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Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max.

Published: May 9, 2005 |