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PNZ102F Datasheet

Silicon NPN Phototransistors

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Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
For optical control systems
Features
Flat window design which is suited to optical systems
Low dark current : ICEO = 5 nA (typ.)
Fast response : tr, tf = 3 µs (typ.)
Wide directional sensitivity
Base pin for easy circuit design (PNZ102F)
PNA1401LF
Unit : mm
ø4.6±0.15 Glass window
2-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* PNZ102F only
Symbol
VCEO
VCBO*
VECO
VEBO*
IC
PC
Topr
Tstg
Ratings
30
40
5
5
50
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
21
ø5.75 max.
1: Emitter
2: Collector
PNZ102F
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
1


Panasonic Electronic Components Datasheet

PNZ102F Datasheet

Silicon NPN Phototransistors

No Preview Available !

PNA1401LF, PNZ102F
Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.1
Response time
tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100
Collector saturation voltage
VCE(sat)
L = 500 lx*1 PNA1401LF ICE(L) = 0.1mA
PNZ102F ICE(L) = 0.1mA
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
5
0.3
800
40
3
0.2
max
300
0.4
Unit
nA
mA
nm
deg.
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
2.0
900 lx
1000 lx
800 lx
700 lx
600 lx
1.6 500 lx
400 lx
1.2
300 lx
0.8
200 lx
0.4 100 lx
L = 50 lx
0
0 8 16 24 32
Collector to emitter voltage VCE (V)
10
1
10 –1
10 –2
10 –3
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2
Illuminance L (lx)
10 3
2


Part Number PNZ102F
Description Silicon NPN Phototransistors
Maker Panasonic Semiconductor
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PNZ102F Datasheet PDF






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Panasonic Semiconductor





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