• Part: PNZ108CL
  • Description: Silicon NPN Phototransistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 46.98 KB
Download PNZ108CL Datasheet PDF
Panasonic
PNZ108CL
PNZ108CL is Silicon NPN Phototransistor manufactured by Panasonic.
Features High sensitivity : ICE(L) = 3.5 m A (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package 45± 3˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 - 25 to +85 - 30 to +100 Unit V V V V m A m W ˚C ˚C ø5.75 max. ø4.2±0.2 3 1 2 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage - 1 - 2 Symbol ICEO ICE(L) λP θ tr- 2 tf- 2 VCE(sat) - 3 Conditions VCE = 10V VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5m A RL = 100Ω ICE(L) = 1m A, L = 1000 lx- 1 lx- 1 min 3.5 typ 0.05 6 900 80 5 6 0.3 max 2 Unit µA m A nm deg. µs µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, ,, - 3 I CE(L) 50Ω Classifications Class ICE(L) (m A) Q 3.5 to 6.0 R 5.0 to 9.1 S > 7.5 Note) Difficult to guarantee pliance with moisture resistance standard (MIL-STD-202D). Phototransistors - Ta 120...