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Panasonic Electronic Components Datasheet

PNZ107F Datasheet

Silicon NPN Phototransistors

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Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
For optical control systems
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : tr = 8 µs (typ.)
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
PNZ107F
ø4.6±0.15
Unit : mm
Glass window
2-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* PNZ108F only
Symbol
VCEO
VCBO*
VECO
VEBO*
IC
PC
Topr
Tstg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
21
ø5.75 max.
1: Emitter
2: Collector
PNZ108F
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
1


Panasonic Electronic Components Datasheet

PNZ107F Datasheet

Silicon NPN Phototransistors

No Preview Available !

PNZ107F, PNZ108F
Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.4
Rise time
tr*2 VCC = 10V, ICE(L) = 5mA
Fall time
tf*2 RL = 100
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
900
40
8
9
0.3
max Unit
2 µA
4 mA
nm
deg.
µs
µs
0.6 V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
12
Ta = 25˚C
1000 lx
T = 2856K
10
L=
1500 lx
900 lx
800 lx 700 lx
600 lx
8 500 lx
400 lx
6
300 lx
4 200 lx
2 100 lx
0
0 4 8 12 16
Collector to emitter voltage
50 lx
10 lx
20 24
VCE (V)
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2
Illuminance L (lx)
10 3
2


Part Number PNZ107F
Description Silicon NPN Phototransistors
Maker Panasonic Semiconductor
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PNZ107F Datasheet PDF






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1 PNZ107F Silicon NPN Phototransistors
Panasonic Semiconductor





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