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PNZ107F - Silicon NPN Phototransistors

Features

  • Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ. ) Signal mixing capability using base pin (PNZ108F) TO-18 standard type package 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating.

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Datasheet Details

Part number PNZ107F
Manufacturer Panasonic
File Size 50.63 KB
Description Silicon NPN Phototransistors
Datasheet download datasheet PNZ107F Datasheet
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Full PDF Text Transcription

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Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors PNZ107F Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) Signal mixing capability using base pin (PNZ108F) TO-18 standard type package 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * ø5.75 max. Symbol VCEO VCBO * Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 4.5±0.
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