FDT86246L mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A
* Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A
* High Performance Trench Technology for Extremely Low rDS(on.
* Load Switch
* Primary Switch
* Buck/Boost Switch
Specifications
MOSFET MAXIMUM RATINGS (TA = 25C unless.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features
* Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A
* Max rDS(on) = 280 mW at VGS = .
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