FDT86102LZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A
* Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A
* HBM ESD protection level > 6 kV typical (Note 4)
* Very.

Application

* DC-DC conversion
* Inverter
* Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C .

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applicati.

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