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FDT86106LZ Datasheet, ON Semiconductor

FDT86106LZ mosfet equivalent, n-channel mosfet.

FDT86106LZ Avg. rating / M : 1.0 rating-12

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FDT86106LZ Datasheet

Features and benefits


* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(.

Application


* DC − DC Conversion MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter Ratings Unit VD.

Description

This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD vo.

Image gallery

FDT86106LZ Page 1 FDT86106LZ Page 2 FDT86106LZ Page 3

TAGS

FDT86106LZ
N-Channel
MOSFET
ON Semiconductor

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