FDT86106LZ datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(.

Application

* DC − DC Conversion MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter Ratings Unit VD.

Description

This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD vo.

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