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FDT86102LZ Datasheet, ON Semiconductor

FDT86102LZ mosfet equivalent, n-channel mosfet.

FDT86102LZ Avg. rating / M : 1.0 rating-11

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FDT86102LZ Datasheet

Features and benefits


* Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A
* Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A
* HBM ESD Protection Level > 6 kV Typical (Note 4)
* Very.

Application


* DC − DC Conversion
* Inverter
* Synchronous Rectifier Specifications MOSFET MAXIMUM RATINGS (TA = 25°C u.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss. G−S zener has been added to enhance ESD voltage level. Features
* Max rDS(on).

Image gallery

FDT86102LZ Page 1 FDT86102LZ Page 2 FDT86102LZ Page 3

TAGS

FDT86102LZ
N-Channel
MOSFET
ON Semiconductor

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