FDT86113LZ datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(.

Application

* DC − DC Switch Specifications MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Rati.

Description

This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD volt.

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