FDT86106LZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description January 2013
* Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
* High performance tren.

Description

January 2013
* Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely .

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