FDT86106LZ
Description
January 2013 - Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A - Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - HBM ESD protection level > 3 KV typical (Note 4) - 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
