Datasheet Details
| Part number | FDT86106LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 350.64 KB |
| Description | MOSFET |
| Datasheet |
 FDT86106LZ Datasheet
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| Part number | FDT86106LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 350.64 KB |
| Description | MOSFET |
| Datasheet |
FDT86106LZ Datasheet
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|
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January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application DC - DC Conversion RoHS Compliant D SOT-223 S D G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Cur
FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDT86106LZ | N-Channel MOSFET | ON Semiconductor |
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