FDT86106LZ Description
January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced...
FDT86106LZ Key Features
- Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL tested
- DC Conversion
- RoHS pliant