FDT86113LZ
Description
Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A - Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - HBM ESD protection level > 3 KV typical (Note 4) - 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
