FDT86256 datasheet, mosfet equivalent, Fairchild Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 246.36KB)

Features and benefits

* Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
* Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
* Very low Qg and Qgd compared to competing trench technol.

Application

* DC-DC conversion
* Inverter
* Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA .

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
* Fa.

Image gallery