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FDT86246 - MOSFET

FDT86246 Description

FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ .
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A. Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1. High performance trench tech.

FDT86246 Applications

* Load Switch
* Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissip

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MOSFET Fairchild Semiconductor
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