Datasheet4U Logo Datasheet4U.com

FDT86246 - MOSFET

Datasheet Summary

Description

Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDT86246

Datasheet Details

Part number FDT86246
Manufacturer Fairchild Semiconductor
File Size 235.41 KB
Description MOSFET
Datasheet download datasheet FDT86246 Datasheet
Additional preview pages of the FDT86246 datasheet.

📁 Similar Datasheet

  • FDT86246 - N-Channel MOSFET (ON Semiconductor)
  • FDT86246L - N-Channel MOSFET (ON Semiconductor)
  • FDT86244 - N-Channel MOSFET (ON Semiconductor)
  • FDT86244 - N-Channel Enhancement MOSFET (Kexin)
  • FDT86102LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86106LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86113LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT1600N10ALZ - N-Channel MOSFET (ON Semiconductor)
  • FDT3612 - N-Channel MOSFET (ON Semiconductor)
  • FDT434P - P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Published: |