Datasheet4U Logo Datasheet4U.com

FDT86246 - MOSFET

General Description

Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDT86246 N-Channel MOSFET ON Semiconductor
FDT86246L N-Channel MOSFET ON Semiconductor
FDT86244 N-Channel MOSFET ON Semiconductor
FDT86244 N-Channel Enhancement MOSFET Kexin
FDT86102LZ N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDT86246L N-Channel PowerTrench MOSFET
FDT86244 MOSFET
FDT86256 MOSFET
FDT86102LZ MOSFET
FDT86106LZ MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.