FDT86246 Datasheet | Fairchild Semiconductor

FDT86246 N-Channel Power Trench® MOSFET December 2010 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description - Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A - Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL Tested - RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications - Load Switch - Primary Switch SOT-223 D GDS MOSFET...