FDT86246 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A
* Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A
* High Performance Trench Technology for Extremely Low RDS(on) .

Application

* Load Switch
* Primary Switch MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Rati.

Description

This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness. Features
* Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A
* Max RDS(on) = 329 mW a.

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