FDN358P Datasheet, ON Semiconductor

* −1.5 A, −30 V
* RDS(ON) = 125 mW @ VGS = −10 V
* RDS(ON) = 200 mW @ VGS = −4.5 V
* Low Gate Charge (4 nC Typical)
* High Performance Trench Technolo.

load switching and power management, battery charging circuits, and DC/DC conversion. Features
* −1.5 A, −30 V
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This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well .