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FDN358P Datasheet, ON Semiconductor

FDN358P mosfet equivalent, p-channel mosfet.

FDN358P Avg. rating / M : 1.0 rating-12

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FDN358P Datasheet

Features and benefits


* −1.5 A, −30 V
* RDS(ON) = 125 mW @ VGS = −10 V
* RDS(ON) = 200 mW @ VGS = −4.5 V
* Low Gate Charge (4 nC Typical)
* High Performance Trench Technolo.

Application

load switching and power management, battery charging circuits, and DC/DC conversion. Features
* −1.5 A, −30 V
.

Description

This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well .

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TAGS

FDN358P
P-Channel
MOSFET
FDN352AP
FDN357N
FDN359AN
ON Semiconductor

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