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FDN359BN Datasheet, ON Semiconductor

FDN359BN mosfet equivalent, n-channel mosfet.

FDN359BN Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 293.34KB)

FDN359BN Datasheet
FDN359BN
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 293.34KB)

FDN359BN Datasheet

Features and benefits


* 2.7 A, 30 V
* RDS(ON) = 0.046 W @ VGS = 10 V
* RDS(ON) = 0.060 W @ VGS = 4.5 V
* Very Fast Switching Speed
* Low Gate Charge (5 nC Typical)
* Hi.

Application

where low in−line power loss and fast switching are required. Features
* 2.7 A, 30 V
* RDS(ON) = 0.046 W @ VGS =.

Description

This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low vol.

Image gallery

FDN359BN Page 1 FDN359BN Page 2 FDN359BN Page 3

TAGS

FDN359BN
N-Channel
MOSFET
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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