FDN359BN
FDN359BN is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required.
Features
- 2.7 A, 30 V
- RDS(ON) = 0.046 W @ VGS = 10 V
- RDS(ON) = 0.060 W @ VGS = 4.5 V
- Very Fast Switching Speed
- Low Gate Charge (5 n C Typical)
- High Performance Version of Industry Standard SOT- 23 Package.
Identical Pin Out to SOT- 23 with 30% Higher Power Handling Capability
- This Device is Pb- Free and Halide Free
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±20
Maximum Drain
Continuous (Note 1a)
Current
Pulsed
PD Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG Operating and Storage Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Max
Unit
Rq JA Thermal Resistance, Junction- to- Ambient (Note...
