FDN359BN mosfet equivalent, n-channel mosfet.
* 2.7 A, 30 V
* RDS(ON) = 0.046 W @ VGS = 10 V
* RDS(ON) = 0.060 W @ VGS = 4.5 V
* Very Fast Switching Speed
* Low Gate Charge (5 nC Typical)
* Hi.
where low in−line power loss and fast switching are required.
Features
* 2.7 A, 30 V
* RDS(ON) = 0.046 W @ VGS =.
This N−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
These devices are well suited for low vol.
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