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Fairchild Semiconductor Electronic Components Datasheet

FDN359AN Datasheet

N-Channel Logic Level PowerTrenchTM MOSFET

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April 1999
FDN359AN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V
RDS(ON) = 0.060 @ VGS = 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
359A
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1999 Fairchild Semiconductor Corporation
D
GS
Ratings
30
±20
2.7
15
0.5
0.46
-55 to 150
250
75
Units
V
V
A
W
°C
°C/W
°C/W
FDN359AN Rev.C


Fairchild Semiconductor Electronic Components Datasheet

FDN359AN Datasheet

N-Channel Logic Level PowerTrenchTM MOSFET

No Preview Available !

Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Min Typ Max Units
BVDSS
BVDSS/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
30
23
V
mV/ oC
VDS = 24 V, VGS= 0 V
1 µA
TJ = 55°C
10 µA
VGS = 20 V,VDS = 0 V
VGS = -20 V, VDS = 0 V
100 nA
-100 nA
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 2.7 A
VGS = 4.5 V, ID = 2.4 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 2.7 A
TJ =125°C
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note)
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
VDD = 5 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 10 V, ID = 2.7 A,
VGS = 5 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
1 1.6
3
V
-4 mV/ oC
0.037 0.046
0.055 0.075
0.049 0.06
15
9.5
A
S
480 pF
120 pF
45 pF
6 12
13 24
15 27
4 10
57
1.4
1.6
ns
ns
ns
ns
nC
nC
nC
IS
VSD
Note:
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.42 A (Note)
0.42
0.65 1.2
A
V
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment :
a. 250oC/W when mounted on
a 0.02 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 270oC/W when mounted on
a minimum pad.
FDN359AN Rev.C


Part Number FDN359AN
Description N-Channel Logic Level PowerTrenchTM MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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