FDN357N datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 1.9 A, 30 V
* RDS(ON) = 0.09 W @ VGS = 4.5 V
* RDS(ON) = 0.06 W @ VGS = 10 V
* Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary .

Application

in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low i.

Description

SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. Thes.

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