FDN359AN datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 2.7 A, 30 V
* RDS(ON) = 0.046 W @ VGS = 10 V
* RDS(ON) = 0.060 W @ VGS = 4.5 V
* Very Fast Switching
* Low Gate Charge (5 nC Typical)
* High Pow.

Application

where low in−line power loss and fast switching are required. Features
* 2.7 A, 30 V
* RDS(ON) = 0.046 W @ VGS =.

Description

This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low vol.

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