FDN359AN N-Channel MOSFET
• 2.7 A, 30 V
♦ RDS(ON) = 0.046 W @ VGS = 10 V ♦ RDS(ON) = 0.060 W @ VGS = 4.5 V
• Very Fast Switching
• Low Gate Charge (5 nC Typical)
• High Power Versi.
where low in−line power loss and fast switching are required.
Features
• 2.7 A, 30 V
♦ RDS(ON) = 0.046 W @ VGS = 10 .
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