FDN352AP
Overview
This P-Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
- -1.3 A, -30 V RDS(ON) = 180 mW @ VGS = -10 V
- -1.1 A, -30 V RDS(ON) = 300 mW @ VGS = -4.5 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT-23 Package. Identical Pin-out to SOT-23 with 30% Higher Power Handling Capability
- This Device is Pb-Free, Halide Free and is RoHS Compliant
