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DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP
VDSS −30 V
RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V
ID MAX −1.3 A −1.1 A
General Description This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in−line power loss is needed in a very small outline surface mount package.
Features
• −1.3 A, −30 V RDS(ON) = 180 mW @ VGS = −10 V • −1.1 A, −30 V RDS(ON) = 300 mW @ VGS = −4.5 V • High Performance Trench Technology for Extremely Low RDS(ON) • High Power Version of Industry Standard SOT−23 Package.
FDN352AP Datasheet
