FDN352AP mosfet equivalent, p-channel mosfet.
* −1.3 A, −30 V RDS(ON) = 180 mW @ VGS = −10 V
* −1.1 A, −30 V RDS(ON) = 300 mW @ VGS = −4.5 V
* High Performance Trench Technology for Extremely Low RDS(ON) .
where low in−line power loss is needed in a very small outline surface mount package.
Features
* −1.3 A, −30 V RDS(O.
Image gallery