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FDN352AP Key Features

  • 1.3 A, -30 V RDS(ON) = 180 mW @ VGS = -10 V
  • 1.1 A, -30 V RDS(ON) = 300 mW @ VGS = -4.5 V
  • High Performance Trench Technology for Extremely Low RDS(ON)
  • High Power Version of Industry Standard SOT-23 Package. Identical
  • This Device is Pb-Free, Halide Free and is RoHS pliant

Other FDN352AP Datasheets

Manufacturer Part Number Description
Fairchild Semiconductor Logo Fairchild FDN352AP P-Channel MOSFET
UMW
UMW		 FDN352AP -30V P-ChanneI MOSFET
Kexin Logo Kexin Semiconductor FDN352AP P-Channel MOSFET
EVVOSEMI Logo EVVO FDN352AP 30V P-Channel MOSFET
VBsemi Logo VBsemi FDN352AP-NL 30V P-Channel MOSFET

View all FDN352AP datasheets →

FDN352AP Description

This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss is needed in a very small outline surface mount package.