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FDN352AP Datasheet P-Channel MOSFET

Manufacturer: onsemi

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Datasheet Details

Part number FDN352AP
Manufacturer onsemi
File Size 238.18 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN352AP Datasheet

General Description

This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in−line power loss is needed in a very small outline surface mount package.

Overview

DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1.

Key Features

  • 1.3 A,.
  • 30 V RDS(ON) = 180 mW @ VGS =.
  • 10 V.
  • 1.1 A,.
  • 30 V RDS(ON) = 300 mW @ VGS =.
  • 4.5 V.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power Version of Industry Standard SOT.
  • 23 Package. Identical Pin.
  • out to SOT.
  • 23 with 30% Higher Power Handling Capability.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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