* Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A
* Max rDS(on) = 356 mW at VGS = −6 V, ID = −1.8 A
* Very Low rDS(on) Mid Voltage P−Channel Silicon Technology.

as Well as Load Switch Applications
* 100% UIL Tested
* This Device is Pb−Free, Halide Free and is ROHS Complian.

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features
* Max rDS(on) = 307.

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