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FDMC86260 - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A.
  • Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A.
  • High Performance Technology for Extremely Low RDS(on).
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMC86260
Manufacturer onsemi
File Size 542.29 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86260 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 25 A, 34 mW FDMC86260 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A • Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.
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