FDMC86260 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Shielded Gate MOSFET Technology
* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
* High Performance Techno.

Application

* DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to.

Description

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shie.

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