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FDMC86260 Datasheet, ON Semiconductor

FDMC86260 mosfet equivalent, n-channel mosfet.

FDMC86260 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 542.29KB)

FDMC86260 Datasheet
FDMC86260
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 542.29KB)

FDMC86260 Datasheet

Features and benefits


* Shielded Gate MOSFET Technology
* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
* High Performance Techno.

Application


* DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to.

Description

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shie.

Image gallery

FDMC86260 Page 1 FDMC86260 Page 2 FDMC86260 Page 3

TAGS

FDMC86260
N-Channel
MOSFET
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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