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FDMC86260 Datasheet, Fairchild Semiconductor

FDMC86260 mosfet equivalent, n-channel power trench mosfet.

FDMC86260 Avg. rating / M : 1.0 rating-11

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FDMC86260 Datasheet

Features and benefits

General Description
* Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
* Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
* High performance technology for extreme.

Description


* Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
* Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
* High performance technology for extremely low rDS(on)
* 100% UIL Tested
* Termination is Lead-free
* RoHS Compliant This N-Chan.

Image gallery

FDMC86260 Page 1 FDMC86260 Page 2 FDMC86260 Page 3

TAGS

FDMC86260
N-Channel
Power
Trench
MOSFET
FDMC86260ET150
FDMC86261P
FDMC86262P
Fairchild Semiconductor

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