FDMC86260ET150 mosfet equivalent, n-channel mosfet.
* Extended TJ Rating to 175°C
* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
* High Performance Technology.
* DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS
Drain to.
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Extended TJ Rating to 175°C
* Max .
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