FDMC86261P mosfet equivalent, mosfet.
* Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
* Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
* Very low RDS-on mid voltage P channel silicon technolog.
as well as load switch applications
* 100% UIL Tested
* RoHS Compliant
General Description
This P-Channel MOSFE.
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
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