FDMB3800N datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A
* Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A
* Fast Switching Speed
* Low Gate Charge
* High Perfo.

Application

where low in−line power loss and fast switching are required. Features
* Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8.

Description

These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low .

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