FDMB3900AN datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
* Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
* Fast switching speed These N-Channel.

Application

where the low in-line power loss and fast switching are required.
* RoHS Compliant Pin 1 MicroFET 3X1.9 D2 5 D2 6.

Description

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
* Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
* Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that .

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