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FDMB668P - P-Channel 1.8V Logic Level PowerTrench MOSFET

General Description

FDMB668P is excellent for load switch and DC-DC conversion among portable electronics.

It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package.

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMB668P P-Channel 1.8V Logic Level PowerTrench® MOSFET February 2007 FDMB668P P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mΩ Features General Description FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When optimizing the dimension of portable applications, this little device offers a very efficient solution. ® tm „ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.1A „ Max rDS(on) = 50mΩ at VGS = -2.5V, ID = -5.1A „ Max rDS(on) = 70mΩ at VGS = -1.8V, ID = -4.3A „ Excellent for portable application at VGS = -1.8V „ Thin profile - Maximum height = 0.