FDMB2307NZ Datasheet Text
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FDMB2307NZ Dual mon Drain N-Channel PowerTrench® MOSFET
FDMB2307NZ
Dual mon Drain N-Channel PowerTrench® MOSFET
20 V, 9.7 A, 16.5 mΩ
Features
- Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
- Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A
- Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A
- Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A
- Low Profile
- 0.8 mm maximum
- in the new package MicroFET 2x3 mm
- HBM ESD protection level > 2 kV (Note 3)
- RoHS pliant
October 2011
General Description
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It Features two mon drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).
Application
- Li-Ion Battery Pack
Pin 1
Pin 1
S1
S1
G1
G2 D1/D2 S2 S2
4 5
3
G1
2 1...
