FDMB3900AN Datasheet Text
FDMB3900AN Dual N-Channel PowerTrench® MOSFET
FDMB3900AN
Dual N-Channel PowerTrench® MOSFET
25 V, 7.0 A, 23 mΩ
June 2013
Features
General Description
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
- Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
- Fast switching speed
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.
- RoHS pliant
Pin 1 MicroFET 3X1.9
D2 5 D2 6 D1 7 D1 8
Q2
4 G2
3 S2
Q1
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter
Drain to...