FDMB2308PZ Datasheet | Fairchild Semiconductor

FDMB2308PZ Dual mon Drain P-Channel PowerTrench® MOSFET FDMB2308PZ April 2014 Dual mon Drain P-Channel PowerTrench® MOSFET -20 V, -7 A, 36 mΩ Features - Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A - Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A - Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm - HBM ESD protection level 2.8 kV (Note 3) - RoHS pliant General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It Features two mon drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on). Application - Li-Ion Battery Pack Pin 1 Pin 1 S1 S1 G1 D1/D2 G2 4 S2 5 3 G1 2 S1 MLP 2x3 S2 S2 G2 S2 6 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol...