FDMB3800N Datasheet Text
MOSFET
- Dual, N-Channel, POWERTRENCH)
30 V, 4.8 A, 40 mW
FDMB3800N
General Description These N- Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required.
Features
- Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A
- Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- This Device is Pb- Free, Halide Free and is RoHS pliant
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current
- Continuous TA = 25°C (Note 1a)
- Pulsed
30
V
±20
V
A 4.8 9
PD Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note 1b)...
