Datasheet4U Logo Datasheet4U.com

FDMB2307NZ - Dual Common Drain N-Channel MOSFET

General Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.

Key Features

  • Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A.
  • Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A.
  • Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A.
  • Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A.
  • Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm.
  • HBM ESD protection level > 2 kV (Note 3).
  • RoHS Compliant October 2011 General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMB2307NZ Dual N-Channel MOSFET ON Semiconductor
FDMB2308PZ Dual P-Channel MOSFET ON Semiconductor
FDMB3800N Dual N-Channel MOSFET ON Semiconductor
FDM-2B FDM-2B ETC
FDM100-0045SP Buck Chopper IXYS Corporation

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDMB2308PZ MOSFET
FDMB3800N Dual N-Channel PowerTrench MOSFET
FDMB3900AN Dual N-Channel MOSFET
FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET
FDMB668P P-Channel 1.8V Logic Level PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET 20 V, 9.7 A, 16.5 mΩ Features „ Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A „ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A „ Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A „ Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm „ HBM ESD protection level > 2 kV (Note 3) „ RoHS Compliant October 2011 General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.