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MOSFET – Dual, N-Channel, Common Drain, POWERTRENCH)
20 V, 9.7 A, 16.5 mW
FDMB2307NZ
General Description This device is designed specifically as a single package solution for
Li−Ion battery pack protection circuit and other ultra−portable applications. It features two common drain N−channel MOSFETs, which enables bidirectional current flow, on onsemi’s advanced POWERTRENCH process with state of the art MicroFET t Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).
Features
• Max rS1S2(on) = 16.5 mW at VGS = 4.5 V, ID = 8 A • Max rS1S2(on) = 18 mW at VGS = 4.2 V, ID = 7.4 A • Max rS1S2(on) = 21 mW at VGS = 3.1 V, ID = 7 A • Max rS1S2(on) = 24 mW at VGS = 2.5 V, ID = 6.7 A • Low Profile − 0.