FDMB3900AN - Dual N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMB3900AN
Manufacturer	Fairchild Semiconductor
File Size	244.39 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMB3900AN-FairchildSemiconductor.pdf

FDMB3900AN Product details

Description

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge High performance trench technology for extremely low rDS(on) High power and c

Features

General.

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Published: Jan 10, 2017 |