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FDMB3800N - Dual N-Channel MOSFET

Description

These N Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A.
  • Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant MOSFET.

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Datasheet Details

Part number FDMB3800N
Manufacturer onsemi
File Size 210.51 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMB3800N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Dual, N-Channel, POWERTRENCH) 30 V, 4.8 A, 40 mW FDMB3800N General Description These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A • Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.
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