FDMB2308PZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
* Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
* Low Profile - 0.8 mm maximum - in the new package .

Application

It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced Power.

Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild.

Image gallery