FDG6304P fet equivalent, dual p-channel digital fet.
* −25 V, −0.41 A Continuous, −1.5 A Peak
RDS(ON) = 1.1 W @ VGS = −4.5 V RDS(ON) = 1.5 W @ VGS = −2.7 V
* Very Low Level Gate Drive Requirements Allowing Direc.
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
* −25 V, −0.41 A Continuous, −1..
These dual P−Channel logic level enhancement mode field effect
transistors are produced using onsemi proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device h.
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