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FDG6301N Datasheet, ON Semiconductor

FDG6301N fet equivalent, dual n-channel digital fet.

FDG6301N Avg. rating / M : 1.0 rating-12

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FDG6301N Datasheet

Features and benefits


* 25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operat.

Application

as a replacement for bipolar digital transistors and small signal MOSFETs. Features
* 25 V, 0.22 A Continuous, 0.65 .

Description

These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device.

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TAGS

FDG6301N
Dual
N-Channel
Digital
FET
ON Semiconductor

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