FDG6303N fet equivalent, dual n-channel digital fet.
25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V .
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
25 V, 0.50 A continuous, 1.5 A peak.
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