FDG6303N fet equivalent, dual n-channel digital fet.
* 25 V, 0.50 A Continuous, 1.5 A Peak
RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.60 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct
O.
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
* 25 V, 0.50 A Continuous, 1.5 A.
These dual N−Channel logic level enhancement mode field effect
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device.
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