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FDG6306P Datasheet, ON Semiconductor

FDG6306P mosfet equivalent, p-channel mosfet.

FDG6306P Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 239.70KB)

FDG6306P Datasheet

Features and benefits


* −0.6 A, −20 V
* RDS(ON) = 420 mW @ VGS = −4.5 V
* RDS(ON) = 630 mW @ VGS = −2.5 V
* Low Gate Charge
* High Performance Trench Technology for Extreme.

Application

with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −0.6 A, −20 V
* RDS(ON) = 420 mW @ VGS = −4.5.

Description

This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −0.6 A, −20 V
.

Image gallery

FDG6306P Page 1 FDG6306P Page 2 FDG6306P Page 3

TAGS

FDG6306P
P-Channel
MOSFET
ON Semiconductor

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