FDG6301N fet equivalent, dual n-channel/ digital fet.
25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circ.
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
25 V, 0.22 A continuous, 0.65 A pea.
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