FDC86244 mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A
* Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A
* High Performance Tren.
* Load Switch
* Synchronous Rectifier
* Primary Switch
www.onsemi.com
TSOT23 6−Lead CASE 419BL
MARKING DIA.
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
* Shielded Gate MOSFET.
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