FDC8602 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
* Shielded Gate MOSFET Technology
* Max .

Application

* Load Switch
* Synchronous Rectifier D2 S1 D1 G2 S2 Pin 1 SuperSOT G1 TM -6 MOSFET Maximum Ratings TA = 25 °.

Description

This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
* Shielded Gate MOSFET Technology
* Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
* Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
*.

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