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FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Applications „ Load Switch „ Synchronous Rectifier „ Primary Switch S D D D G D Pin 1 D D 6 1 D SuperSOTTM -6 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 100 ±20 2.7 12 13 1.6 0.8 -55 to +150 Units V V A mJ W °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 30 78 °C/W Package Marking and Ordering Information Device Marking .861 Device FDC8601 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDC8601 Rev.

Overview

FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A.
  • Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • Fast switching speed.
  • 100% UIL Tested.
  • RoHS Compliant General.

📁 Similar Datasheet

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