FDC8601 mosfet equivalent, n-channel shielded gate powertrench mosfet.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
* High performance tren.
* Load Switch
* Synchronous Rectifier
* Primary Switch
S D D D G D Pin 1 D D 6 1 D SuperSOTTM -6 5 2 D S 4 .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
* Load Sw.
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