FDC86244 Datasheet (Fairchild Semiconductor) - N-Channel Power Trench MOSFET

FDC86244, N-Channel Power Trench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Applications * Load Switch * Synchronous Rectifier * Primary Switch S D D D G D Pin 1 D -6 D 6 1 D Sup

FDC86244 Features

* Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A

* Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* Fast switching