FDC86244 - N-Channel Power Trench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC86244
Manufacturer	Fairchild Semiconductor
File Size	225.17 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDC86244-FairchildSemiconductor.pdf

FDC86244 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Load Switch Synchronous Rectifier Primary Switch S D D D G D Pin 1 D -6 D 6 1 D SuperSOTTM 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pu

Features

Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A.
Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
Fast switching speed.
100% UIL Tested.
RoHS Compliant General.

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Published: Aug 3, 2014 |