FDC86244 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A
* Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A
* High performance trench technology for extremely low rDS(on.

Application

* Load Switch
* Synchronous Rectifier
* Primary Switch S D D D G D Pin 1 D -6 D 6 1 D SuperSOTTM 5 2 D S 4 .

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications
* Load Switch
* Synchronous Rectifier
* Primary Swit.

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