FDC8602 mosfet equivalent, dual n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A
* Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A
* High Performance Tren.
* Load Switch
* Synchronous Rectifier
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Va.
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.
Features
* Shielded Gate MOSFET Technolog.
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