* Shielded Gate MOSFET Technology
* Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A
* Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A
* High Performance Tren.

* Load Switch
* Synchronous Rectifier
* Primary Switch MAXIMUM RATINGS (TA = 25°C unless otherwise noted) .

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness. Features
* Shielded Gate MOSFET Technolog.

FDC8602

FDC86244

FDC855N

FDC8878

FDC8884

FDC8886

FDC-xx

FDC05

FDC05-48S120

FDC10

FDC1004

FDC1004Q

FDC15

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