FDC655BN mosfet equivalent, single n-channel mosfet.
* Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A
* Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A
* Fast Switching
* Low Gate Charge
* High Performance T.
where low in−line power loss and fast switching are required.
Features
* Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 .
This N−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
These devices are well suited for low vol.
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